High-power characteristics of GaN/InGaN double heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1675934
Reference8 articles.
1. N‐AlGaN/p‐InGaN/n‐GaN Heterojunction Bipolar Transistors for High Power Operation
2. A review of junction field effect transistors for high-temperature and high-power electronics
3. Reduced damage of electron cyclotron resonance etching by In doping into p-GaN
4. High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
5. High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
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