Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3522649
Reference13 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
3. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
4. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors
5. On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface
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