Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3456159
Reference24 articles.
1. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
2. Carrier lifetime measurement in n− 4H-SiC epilayers
3. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
4. Doping of SiC by Implantation of Boron and Aluminum
5. A Novel Diffusion Resistant P-Base Region Implantation for Accumulation Mode 4H–SiC Epi-Channel Field Effect Transistor
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1. A review of silicon carbide CMOS technology for harsh environments;Materials Science in Semiconductor Processing;2024-08
2. Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC;Japanese Journal of Applied Physics;2024-06-03
3. Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process;Japanese Journal of Applied Physics;2024-05-01
4. Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes;Advanced Electronic Materials;2024-03-27
5. Tunneling current through non-alloyed metal/heavily-doped SiC interfaces;Materials Science in Semiconductor Processing;2024-03
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