Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors-Reference-Cited by-同舟云学术

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Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

Published:2010-06-28 Issue:26 Volume:96 Page:263515
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ostermaier C.,Pozzovivo G.,Basnar B.,Schrenk W.,Schmid M.,Tóth L.,Pécz B.,Carlin J.-F.,Gonschorek M.,Grandjean N.,Strasser G.,Pogany D.,Kuzmik J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3458700

Reference15 articles.

1. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

2. Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

3. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

4. Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

5. Device Research Conference;Maier D.,2009

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1. Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment;2021 IEEE Aerospace Conference (50100);2021-03-06

2. Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress;IEEE Transactions on Electron Devices;2017-11

3. Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors;Applied Physics Letters;2015-11-09

4. Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors;physica status solidi (a);2015-01-21

5. Effect of Growth Temperature on Structural Quality of In-Rich InxAl1−xN Alloys on Si (111) Substrate by RF-MOMBE;ISRN Nanomaterials;2014-02-23

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