Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

Published:2015-01-21 Issue:5 Volume:212 Page:1086-1090
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Blaho M.¹,Gregušová D.¹,Haščík Š.¹,Jurkovič M.¹,Ťapajna M.¹,Fröhlich K.¹,Dérer J.¹,Carlin J. -F.²,Grandjean N.²,Kuzmík J.¹

Affiliation:

1. Institute of Electrical Engineering; Slovak Academy of Sciences; Dubravska cesta 9 841 04 Bratislava Slovakia

2. Institute of Quantum Electronics and Photonics; EPFL Lausanne; 1015 Lausanne Switzerland

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Effect of image charges in the drain delay of AlGaN∕GaN high electron mobility transistors

2. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

3. Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

4. Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

5. A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic inverter using GaN-based CMOS-HEMTs with depletion-mode and enhancement-mode of ferroelectric charge trap gate stacked oxide layers;Materials Science in Semiconductor Processing;2024-01

2. Normally Off WSe₂ Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping;ACS Applied Nano Materials;2022-11-17

3. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering;Journal of Applied Physics;2021-07-07

4. Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration;Results in Physics;2021-05

5. Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications;Crystals;2020-12-18