Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference20 articles.
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3. Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates;Li;IEEE Electron Device Lett,2019
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4. High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures;Applied Physics Letters;2023-04-03
5. ОСОБЕННОСТИ КОНСТРУКЦИИ ГЕТЕРОСТРУКТУР ПРИ ПОСТРОЕНИИ GaN НОРМАЛЬНО ЗАКРЫТЫХ ТРАНЗИСТОРОВ ДЛЯ СИЛОВЫХ МОНОЛИТНЫХ ИНТЕГРАЛЬНЫХ СХЕМ;Nanoindustry Russia;2023-02-16
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