Affiliation:
1. School of Advanced Technology Xi'an Jiaotong‐Liverpool University Suzhou 215123 China
2. Department of Electrical Eng and Electronics University of Liverpool Liverpool L69 3BX UK
Abstract
Herein, the electrical characteristics and Schottky barrier of Ni/Au and Ni/Ag contacts on the GaN/AlGaN/GaN heterojunction are investigated. Both contacts on the p‐GaN contact layer (Mg: ≈3 × 1019 cm−3) exhibit weak Schottky characteristics. The nonlinear current–voltage (I–V) characteristics are observed, leading to variations in contact resistance (RC) and sheet resistance (Rsh) with changing bias voltage. The Ni/Ag contact achieves a lower Schottky barrier height calculated by using the I–V method. Furthermore, when employing a p++‐GaN layer (Mg: ≈1 × 1020 cm−3) as the contact layer, the Ni/Ag contact forms an Ohmic contact without Schottky characteristics, achieving a satisfactory RC of 30.31 Ω mm. This result demonstrates its viability as a competitive candidate for p‐channel field‐effect transistors’ fabrication.
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