Properties of strained In0.2Ga0.8As/GaAs superlattices with various barrier thicknesses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348982
Reference15 articles.
1. Defects in epitaxial multilayers
2. Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures
3. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
4. Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy
5. Insitumeasurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In situ characterization of lattice relaxation of the BaTiO3/LaNiO3 superlattices epitaxially grown on SrTiO3 substrates;Journal of Crystal Growth;2005-04
2. Depth resolved investigations of the relaxation behaviour in strained GaInAs/GaAs superlattices using grazing incidence X-ray diffraction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05
3. Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001];MRS Proceedings;1995
4. Investigation of effect of strain-compensated structure and compensation limit in strained-layer multiple quantum wells;Journal of Crystal Growth;1994-12
5. Depth resolved investigation of the relaxation behaviour in strained GaInAs/GaAs superlattices;Physica B: Condensed Matter;1994-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3