Depth resolved investigation of the relaxation behaviour in strained GaInAs/GaAs superlattices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
2. Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction
3. Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures
4. Properties of strained In0.2Ga0.8As/GaAs superlattices with various barrier thicknesses
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