Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354724
Reference13 articles.
1. Strain relaxation in InxGa1-xAs/GaAs heterostructures
2. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
3. Investigation of a semiconductor superlattice by use of grazing incidence X-ray diffraction
4. Apparatus for X-ray diffraction in ultrahigh vacuum
5. Investigations of semiconductor superlattices by depth‐sensitive x‐ray methods
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