Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343478
Reference15 articles.
1. Growth of highly strained InGaAs on GaAs
2. Crystal Interfaces. Part II. Finite Overgrowths
3. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
4. Generation of misfit dislocations in semiconductors
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