Growth of highly strained InGaAs on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100000
Reference16 articles.
1. Role of experimental resolution in measurements of critical layer thickness for strained‐layer epitaxy
2. Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures
3. Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures
4. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
5. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
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