Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor
Author:
Affiliation:
1. Department of Electronic Engineering, National Kaohsiung Normal University, 116, Ho-ping 1st Road, Kaohsiung 802, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference12 articles.
1. An analytical model for current transport in AlGaAs/GaAs abrupt HBTs with a setback layer
2. High current gain, low offset voltage heterostructure emitter bipolar transistors
3. Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors
4. An improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers
5. High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base
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2. InGaP/GaAs Superlattice-Emitter and GaAsBi Base Heterojunction Bipolar Transistor with High Current-Gain Linearity;Science of Advanced Materials;2018-05-01
3. Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors;Semiconductors;2015-10
4. Magnetotransport potentials for anisotropic thin films with stripline and ground plane contacts;Quantum Sensing and Nanophotonic Devices XII;2015-02-08
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