An improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
2. Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base
3. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
4. High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy
5. High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors;Semiconductors;2012-12
2. An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage;Thin Solid Films;2012-10
3. Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor;Applied Physics Letters;2010-02-08
4. A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches;Materials Chemistry and Physics;2004-10
5. Characteristics of Spike-Free Single and Double Heterostructure-Emitter Bipolar Transistors;Japanese Journal of Applied Physics;2004-06-09
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