Investigation of effect of strain-compensated structure and compensation limit in strained-layer multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
2. Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers
3. Band structure engineering of semiconductor lasers for optical communications
4. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
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2. Strain-compensated InGaAsSb/InGaAsSb multiquantum-well structure grown on InP (0 0 1) substrate as optical absorber for wavelengths beyond 2 μm;Journal of Crystal Growth;2020-04
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4. Lattice-Matched and Strain-Compensated Materials for Mid-Wave and Long-Wave Infrared Quantum Cascade Lasers;ECS Transactions;2011-10-04
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