Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4820255
Reference36 articles.
1. Molecular‐beam epitaxy of GaSb/AlSb optical device layers on Si(100)
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3. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
4. Initial growth stage of GaSb on Si(001) substrates with AlSb initiation layers
5. Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study
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