Initial growth stage of GaSb on Si(001) substrates with AlSb initiation layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field
2. Radiative recombination in type‐II GaSb/GaAs quantum dots
3. Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate
4. Epitaxial Lateral Overgrowth of GaAs by LPE
5. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
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1. Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers;AIP Advances;2024-03-01
2. Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE;Applied Physics Letters;2023-04-17
3. High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters;Optical Materials Express;2022-12-13
4. Investigation of the growth mechanism and crystallographic structures of GaSb dots nucleation layer and GaSb thin film grown on Si(001) substrate by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2022-05
5. III–V Optoelectronic Devices Grown on Silicon;digital Encyclopedia of Applied Physics;2021-06-14
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