In situ surface and interface study of crystalline (3×1)-O on InAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4959940
Reference19 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches
2. Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications
3. Nanometre-scale electronics with III–V compound semiconductors
4. Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy
5. Lifting the off-state bandgap limit in InAs channel metal-oxide-semiconductor heterostructures of nanometer dimensions
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4. Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing;ACS Applied Materials & Interfaces;2018-12-03
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