Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

Published:2015-01-05 Issue:1 Volume:106 Page:011606
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tuominen M.¹,Lång J.¹^ORCID,Dahl J.¹,Kuzmin M.¹²,Yasir M.¹,Mäkelä J.¹,Osiecki J. R.³,Schulte K.³,Punkkinen M. P. J.¹,Laukkanen P.¹,Kokko K.¹

Affiliation:

1. Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland

2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation

3. The MAX IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden

Funder

CALIPSO

Suomen Akatemia (Academy of Finland)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905655

Reference41 articles.

1. Materials Fundamentals of Gate Dielectrics

2. Fundamentals of III-V Semiconductor MOSFETs

3. Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation

4. Identification of strained silicon layers at Si-SiO2interfaces and clean Si surfaces by nonlinear optical spectroscopy

5. High-κ Dielectric Materials for Microelectronics

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