Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing-Reference-Cited by-同舟云学术

Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing

Published:2018-12-03 Issue:51 Volume:10 Page:44932-44940
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Tuominen Marjukka¹,Mäkelä Jaakko¹,Yasir Muhammad¹,Dahl Johnny¹,Granroth Sari¹,Lehtiö Juha-Pekka¹,Félix Roberto²^ORCID,Laukkanen Pekka¹^ORCID,Kuzmin Mikhail¹,Laitinen Mikko³,Punkkinen Marko P.J.¹,Hedman Hannu-Pekka⁴,Punkkinen Risto⁴,Polojärvi Ville⁵,Lyytikäinen Jari⁵,Tukiainen Antti⁵,Guina Mircea⁵^ORCID,Kokko Kalevi¹

Affiliation:

1. Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland

2. Renewable Energies, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, DE-14109 Berlin, Germany

3. Department of Physics, University of Jyvaskyla, FI-40014 Jyväskylä, Finland

4. Department of Future Technologies, University of Turku, FI-20014 Turku, Finland

5. Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere, Finland

Funder

Luonnontieteiden ja Tekniikan Tutkimuksen Toimikunta

Helmholtz-Gemeinschaft

Business Finland

Turun yliopiston tutkijakoulu

Helmholtz-Zentrum Berlin f?r Materialien und Energie