High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3660692
Reference27 articles.
1. InN, latest development and a review of the band-gap controversy
2. Structure and electronic properties of InN and In-rich group III-nitride alloys
3. Effect of composition on the band gap of strained InxGa1−xN alloys
4. Band bowing and band alignment in InGaN alloys
5. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
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