Highly regular self-organization of step bunches during growth of SiGe on Si(113)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122197
Reference10 articles.
1. Self-organized growth of quantum-dot structures
2. Anisotropic Coarsening of Periodic Grooves: Time-Resolved X-Ray Scattering
3. Anomalous strong repulsive step-step interaction on slightly misoriented Si(113)
4. Growth of Ge on Si(100) and Si(113) studied by STM
5. Self-assembled Ge nanowires grown on Si(113)
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1. Ga and In adsorption on Si(112): Adsorption sites and superstructure;Physical Review B;2017-03-31
2. One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si (1 1 10);Physical Review Letters;2012-07-12
3. Self-organized Quantum Dot Multilayer Structures;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008
4. Adsorbate induced self-ordering of germanium nanoislands on Si(113);New Journal of Physics;2007-10-31
5. Unification of step bunching phenomena on vicinal surfaces;Physical Review B;2007-07-12
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