One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si (1 1 10)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.109.025505/fulltext
Reference48 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Competing relaxation mechanisms in strained layers
3. Transition States Between Pyramids and Domes During Ge/Si Island Growth
4. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)
5. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
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2. TPD characterization of Al-OD-Si sites at the interface of bilayer Al0.42Si0.58O2/Ru(0001) thin-films.;Surface Science;2020-06
3. Self-organization of SiGe planar nanowires via anisotropic elastic field;Physical Review Materials;2019-02-12
4. Electronic structure of the Ge/Si(1 0 5) hetero-interface: an ARPES and DFT study;Journal of Physics: Condensed Matter;2018-10-25
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