Self-assembled Ge nanowires grown on Si(113)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119369
Reference16 articles.
1. Periodic Arrangement of GE Islands on SI(111)
2. Mesh pattern of Ge islands grown using solid phase epitaxy
3. Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self-organization processes
4. Step arrangement design and nanostructure self-organization on Si(111) surfaces by patterning-assisted control
5. In situ fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition
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3. Ga and In adsorption on Si(112): Adsorption sites and superstructure;Physical Review B;2017-03-31
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