Adsorbate induced self-ordering of germanium nanoislands on Si(113)-Reference-Cited by-同舟云学术

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Adsorbate induced self-ordering of germanium nanoislands on Si(113)

Published:2007-10-31 Issue:10 Volume:9 Page:392-392
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Schmidt Thomas,Clausen Torben,Ingo Flege Jan,Gangopadhyay Subhashis,Locatelli Andrea,Onur Mentes Tevfik,Zhun Guo Fang,Heun Stefan,Falta Jens

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference45 articles.

1. Growth and characterization of self-assembled Ge-rich islands on Si

2. Silicium germanium heterodevices

3. Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures

4. Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films

5. Germanium “quantum dots” embedded in silicon: Quantitative study of self-alignment and coarsening

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1. Preparation and stability of the hexagonal phase of samarium oxide on Ru(0001);Ultramicroscopy;2023-08

2. Ga and In adsorption on Si(112): Adsorption sites and superstructure;Physical Review B;2017-03-31

3. Morphology and chemical composition of cobalt germanide islands on Ge(001);Nanotechnology;2016-06-27

4. Growth and self-organization of SiGe nanostructures;Physics Reports;2013-01

5. Low-Energy Electron Microscopy;Characterization of Materials;2012-10-12

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