Effect of proton energy on damage generation in irradiated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3371714
Reference17 articles.
1. Investigation of type inversion of n-bulk in 10MeV proton-irradiated FZ silicon detectors using a scanning electron microscope
2. Space charge sign inversion investigation in n-type MCz silicon diodes irradiated by 24GeV/c and protons and reactor neutrons
3. Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
4. The effect of particle fluence and flux in alpha-irradiated silicon
5. Local lifetime control in silicon power diode by ion irradiation: introduction and stability of shallow donors
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1. Effect of proton irradiation induced localized defect clusters on recovery time and leakage current in silicon photoconductive semiconductor switches;AIP Advances;2023-10-01
2. Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor;Materials;2023-01-27
3. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04
4. Degradation of the charge collection efficiency of an n-type Fz silicon diode subjected to MeV proton irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-04
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