Degradation of the charge collection efficiency of an n-type Fz silicon diode subjected to MeV proton irradiation

Author:

Barbero Nicolò,Forneris Jacopo,Grilj Veljko,Jakšić Milko,Räisänen Jyrki,Simon Aliz,Skukan Natko,Vittone Ettore

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-04

2. Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams;Quantum Beam Science;2022-03-16

3. Bias-dependent displacement damage effects in a silicon avalanche photodiode;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-11

4. Electrical properties of 3 MeV proton irradiated silicon Schottky diodes;Physica B: Condensed Matter;2021-06

5. Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04

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