Breakdown of silicon particle detectors under proton irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3262611
Reference12 articles.
1. Radiation damage in silicon detectors
2. Bias-dependent annealing of radiation damage in neutron-irradiated silicon p+-n-n+ diodes
3. Bias-dependent radiation damage in high-resistivity silicon diodes irradiated with heavy charged particles
4. Setup for irradiation and characterization of materials and Si particle detectors at cryogenic temperatures
5. Effects of activation by proton irradiation on silicon particle detector electric characteristics
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1. Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor;Materials;2023-01-27
2. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04
3. Degradation of the charge collection efficiency of an n-type Fz silicon diode subjected to MeV proton irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-04
4. Profiling of the injected charge drift current transients by cross-sectional scanning technique;Journal of Applied Physics;2014-02-07
5. The effect of an electrical field on the radiation tolerance of float zone and magnetic Czochralski silicon particle detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2011-05
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