Bias-dependent displacement damage effects in a silicon avalanche photodiode
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. An assessment of the bias dependence of displacement damage effects and annealing in silicon charge coupled devices;Robbins;IEEE Trans. Nucl. Sci.,2013
2. DLTS Studies of bias dependence of defects in silicon NPN bipolar junction transistor irradiated by heavy ions;Liu;Nucl. Instrum. Methods A,2012
3. The influence of an in-situ electric field on H+ and He+ implantation induced defects in silicon;Ravi;Mater. Res. Society Symposium Proc.,1994
4. Comparative study of avalanche photodiodes with different structures in scintillation detection;Moszynski;IEEE Trans. Nucl. Sci.,2001
5. Large area avalanche photodiodes in scintillation and X-rays detection;Moszyński;Nucl. Instrum. Methods Phys. Res. A,2002
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