Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons-Reference-Cited by-同舟云学术

Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

Published:2004-02 Issue:1-2 Volume:518 Page:346-348
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Härkönen J.,Tuovinen E.,Luukka P.,Tuominen E.,Lassila-Perini K.,Mehtälä P.,Nummela S.,Nysten J.,Zibellini A.,Li Z.,Fretwurst E.,Lindstroem G.,Stahl J.,Hönniger F.,Eremin V.,Ivanov A.,Verbitskaya E.,Heikkilä P.,Ovchinnikov V.,Yli-Koski M.,Laitinen P.,Pirojenko A.,Riihimäki I.,Virtanen A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

2. Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

3. The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

4. Heavy ion and proton test site at JYFL-accelerator laboratory

5. A. Vasilescu, G. Lindstroem, http://sesam.desy.de/~gunnar/Si-dfuncs.html.

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