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Investigation of type inversion of n-bulk in 10MeV proton-irradiated FZ silicon detectors using a scanning electron microscope

  • Published:2005-11 Issue:3 Volume:552 Page:357-363
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Leinonen Kari,Palviainen Tanja,Tuuva Tuure,Tuovinen Esa,Härkönen Jaakko,Luukka Panja

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The spatial potential and electric field distribution of irradiated silicon diodes;Journal of Instrumentation;2015-09-09

2. Effect of proton energy on damage generation in irradiated silicon;Journal of Applied Physics;2010-04-15

3. Czochralski silicon detectors irradiated with and 10MeV protons;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-11
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