Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4879022
Reference26 articles.
1. Atomic Layer Deposition of High-<tex>$kappa$</tex>Dielectric for Germanium MOS Applications—Substrate Surface Preparation
2. Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
3. Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates
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2. Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS;ACS Applied Electronic Materials;2021-04-21
3. Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission;Applied Physics Express;2020-07-08
4. Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures;Physical Chemistry Chemical Physics;2020
5. Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission;Nanomaterials;2019-04-04
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