Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3139772
Reference23 articles.
1. Growth and Materials Characterization of Native Germanium Oxynitride Thin Films on Germanium
2. Nanoscale germanium MOS Dielectrics-part I: germanium oxynitrides
3. Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates
4. Deposition of HfO2 on germanium and the impact of surface pretreatments
5. Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films
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