Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures-Reference-Cited by-同舟云学术

Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures

Published:2020 Issue:44 Volume:22 Page:25593-25605
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Marri Ivan¹²³⁴⁵^ORCID,Amato Michele⁶⁷⁸⁹¹⁰^ORCID,Bertocchi Matteo¹²³⁴,Ferretti Andrea⁵¹¹¹²⁴^ORCID,Varsano Daniele⁵¹¹¹²⁴^ORCID,Ossicini Stefano¹²³⁴⁵^ORCID

Affiliation:

1. Department of Sciences and Methods for Engineering

2. University of Modena e Reggio Emilia

3. 42122 Reggio Emilia

4. Italy

5. Centro S3

6. Université Paris-Saclay

7. CNRS

8. Laboratoire de Physique des Solides

9. Orsay

10. France

11. Institute of Nanoscience—Italian National Research Council (CNR-NANO)

12. 41125 Modena

Abstract

Surface chemistry effects are calculated within the many body perturbation theory for Si(100), Ge(100) and SiGe surfaces.

Funder

Horizon 2020 Framework Programme

Università Degli Studi di Modena e Reggio Emila

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP04013D

Reference119 articles.

1. Organometallic Chemistry on Silicon and Germanium Surfaces

2. Periodic Trends in Organic Functionalization of Group IV Semiconductor Surfaces

3. Functionalization of flat Si surfaces with inorganic compounds—Towards molecular CMOS hybrid devices

4. Semiconductor surface functionalization for advances in electronics, energy conversion, and dynamic systems

5. What a Difference a Bond Makes: The Structural, Chemical, and Physical Properties of Methyl-Terminated Si(111) Surfaces

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