Deep radiative levels in as‐grown and implanted rapid thermal annealed InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341677
Reference28 articles.
1. Study of electron traps inn‐GaAs resulting from infrared rapid thermal annealing
2. Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP
3. Planar fully ion implanted InP power junction FET's
4. InP depletion-mode microwave MISFET's
5. Rapid thermal annealing of 200°C mercury implants into InP
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1. Surface state and optical property of sulfur passivated InP;Materials Science in Semiconductor Processing;2014-01
2. Detailed defect study in proton irradiated InP/Si solar cells;Journal of Applied Physics;1999-10
3. Cathodoluminescence Study of Heavily Proton Irradiated Heteroepitaxial n+-p InP/Si Solar Cells;Solid State Phenomena;1998-12
4. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions;Semiconductor Science and Technology;1998-04-01
5. Characterization of surface damage in dry-etched InP;Semiconductor Science and Technology;1997-06-01
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