Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93226
Reference5 articles.
1. Monolithic integration of an injection laser and a metal semiconductor field effect transistor
2. Low threshold Be implanted (GaAl)As laser on semi-insulating substrate
3. A monolithically integrated optical repeater
4. Monolithic integration of a GaAlAs injection laser with a Schottky‐gate field effect transistor
5. Groove GaInAsP laser on semi-insulating InP
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1. Material aspects of OEIC development based on A2B6compounds on silicone and sapphire;SPIE Proceedings;2000-11-28
2. Impurity Effect on Recombination Processes in InP;Japanese Journal of Applied Physics;1996-05-30
3. New hybrid integrated laser diode-drivers using microsolder bump bonding: SPICE simulation of high-speed modulation characteristics;Journal of Lightwave Technology;1994
4. New materials for optoelectronic devices;Ceramics International;1993-01
5. Optoelectronic devices towards monolithic integration;Sadhana;1992-09
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