Groove GaInAsP laser on semi-insulating InP
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19810553?crawler=true&mimetype=application/pdf
Reference7 articles.
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ultra-High speed InGaAsP/InP DFB lasers emitting at 1.3 µm wavelength;IEEE Journal of Quantum Electronics;1987-06
2. InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD;IEEE Journal of Quantum Electronics;1987-06
3. Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser;Applied Physics Letters;1985-12
4. Chapter 2 High-Frequency Current Modulation of Semiconductor Injection Lasers;Lightwave Communications Technology - Part B Semiconductor Injection Lasers, I;1985
5. The beginning of integrated optoelectronic circuits;IEEE Transactions on Electron Devices;1984-11
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