Rapid thermal annealing of 200°C mercury implants into InP
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19860897?crawler=true&mimetype=application/pdf
Reference6 articles.
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
2. Radiation damage annealing of Hg implanted InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
3. Electrical and optical characterization of Mg, Mg/P, and Mg/Ar implants into InP:Fe;Journal of Electronic Materials;1995-01
4. Ion Implantation in Microelectronics—III-V Compounds;IETE Journal of Research;1990-05
5. Deep radiative levels in as‐grown and implanted rapid thermal annealed InP;Journal of Applied Physics;1988-09
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