Characterization of surface damage in dry-etched InP-Reference-Cited by-同舟云学术

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Characterization of surface damage in dry-etched InP

Published:1997-06-01 Issue:6 Volume:12 Page:755-759
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Iber Hartmut,Mo Shaobai,Peiner Erwin,Vollrath Gunther,Schlachetzki Andreas,Fiedler Fritz

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity

2. Uniform linear arrays of strained-layer InGaAs-AlGaAs quantum-well ridge-waveguide diode lasers fabricated by ECR-IBAE

3. High temperature operation of InGaAsP/InP heterostructure lasers and integrated back facet monitors fabricated by chemically assisted ion beam etching

4. Reactive ion beam etching of InP with N2and N2/O2mixtures

5. Electrical and structural changes in the near surface of reactively ion etched InP

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Damage Layer in an Organic Film with Irradiation of Energetic Ion Beams;Japanese Journal of Applied Physics;2010-03-23

2. Cathodoluminescence study of inductively coupled plasma (ICP) etched InP waveguide structures: Influence of the ridge dimension and dielectric capping;Materials Science and Engineering: B;2008-02

3. Introduction of defects during the dry etching of InP photonic structures: a cathodo-luminescence study;Journal of Materials Science: Materials in Electronics;2008-01-20

4. Carrier transport through a dry-etched InP-based two-dimensional photonic crystal;Journal of Applied Physics;2007-06-15

5. Investigation of point defect generation in dry etched InP ridge waveguide structures;Applied Physics Letters;2007-05-28

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