Reactive ion beam etching of InP with N2and N2/O2mixtures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96566
Reference10 articles.
1. Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics
2. Quaternary alloy InxGa1−xAsyP1−y/InP photodetectors
3. Ion beam milling of InP with an Ar/O2‐gas mixture
4. Iodine ion milling of indium‐containing compound semiconductors
5. Surface composition and etching of III‐V semiconductors in Cl2ion beams
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3. Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl2/Ar Plasma;Japanese Journal of Applied Physics;2003-01-15
4. Fabrication and characterization of dry and wet etched InGaAs/InGaAsP/InP long wavelength semiconductor lasers;Optics Express;2002-07-01
5. Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H<formula><inf><roman>2</roman></inf></formula> chemistry;SPIE Proceedings;2001-12-27
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