High temperature operation of InGaAsP/InP heterostructure lasers and integrated back facet monitors fabricated by chemically assisted ion beam etching-Reference-Cited by-同舟云学术

High temperature operation of InGaAsP/InP heterostructure lasers and integrated back facet monitors fabricated by chemically assisted ion beam etching

Published:1993-05-17 Issue:20 Volume:62 Page:2486-2488
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dzioba Steven,Jatar S.,Herak T. V.,Cook John P. D.,Marks J.,Jones T.,Shepherd F. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.109327

Reference11 articles.

1. Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrors

2. Full-wafer technology for large-scale laser processing and testing

3. GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet

4. High-performance InGaAsP/InP 1.3 μm laser structures with both facets etched

5. Continuous operation of monolithic dynamic‐single‐mode coupled‐cavity lasers

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