Study of electron traps inn‐GaAs resulting from infrared rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336891
Reference26 articles.
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5. Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp
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