Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing-Reference-Cited by-同舟云学术

Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing

Published:2017-08-25 Issue:35 Volume:9 Page:30107-30114
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Jiancui,Feng Zhihong,Fan Shuangqing,Shi Sigang,Yue Yuchen,Shen Wanfu^ORCID,Xie Yuan,Wu Enxiu,Sun Chongling,Liu Jing,Zhang Hao,Pang Wei,Sun Dong¹^ORCID,Feng Wei^ORCID,Feng Yiyu,Wu Sen,Zhang Daihua^ORCID

Affiliation:

1. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People’s Republic of China

Funder

State Administration of Foreign Experts Affairs

Ministry of Education of the People's Republic of China

Tianjin Municipality

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b06739

Reference43 articles.

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5. Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

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