Room Temperature Semiconductor–Metal Transition of MoTe2 Thin Films Engineered by Strain
Author:
Affiliation:
1. Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), ‡Department of Energy Science, Department of Physics, and §School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Funder
Institute for Basic Science
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03481
Reference27 articles.
1. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
2. Van der Waals heterostructures
3. Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering
4. Electrochemical Control of Photoluminescence in Two-Dimensional MoS2 Nanoflakes
5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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