Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2-Reference-Cited by-同舟云学术

Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

Published:2014-09 Issue:9 Volume:2 Page:092516
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Kappera Rajesh¹,Voiry Damien¹,Yalcin Sibel Ebru²,Jen Wesley¹,Acerce Muharrem¹,Torrel Sol¹,Branch Brittany²,Lei Sidong³,Chen Weibing³,Najmaei Sina³,Lou Jun³,Ajayan Pulickel M.³,Gupta Gautam²,Mohite Aditya D.²,Chhowalla Manish¹

Affiliation:

1. Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA

2. MPA-11 Materials Synthesis and Integrated Devices, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

3. Mechanical Engineering and Materials Science Department, Rice University, Houston, Texas 77005, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/aplmater/2/9/1.4896077.pdf?itemId=/content/aip/journal/aplmater/2/9/10.1063/1.4896077&mimeType=pdf&containerItemId=content/aip/journal/aplmater

Reference31 articles.

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4. Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems

5. Single-layer MoS2 transistors

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