Manipulation of Charge Transport in MoS<sub>2</sub>/MoTe<sub>2</sub> Field Effect Transistors and Heterostructure by Propagating the Surface Acoustic Wave-Reference-Cited by-同舟云学术

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Manipulation of Charge Transport in MoS₂/MoTe₂ Field Effect Transistors and Heterostructure by Propagating the Surface Acoustic Wave

Published:2024-04-11 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sun Shipeng¹,Zhang Jinxi¹,Zhang Qiankun²,Liu Jing¹^ORCID

Affiliation:

1. State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, China

2. Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instruments, Beijing Information Science and Technology University, Beijing 100192, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c00663

Reference36 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Single-layer MoS2 transistors

3. Surface acoustic wave-based gas sensors

4. Black phosphorus field-effect transistors

5. Broadband Black-Phosphorus Photodetectors with High Responsivity

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in two‐dimensional molybdenum ditelluride (MoTe₂): A comprehensive review of properties, preparation methods, and applications;SusMat;2024-08-20

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