Growth and characterization of single‐heterostructure AlGaAs/InGaP red light‐emitting diodes by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347689
Reference18 articles.
1. High brightness GaAlAs heterojunction red LED's
2. Electronic Structure and Luminescence Processes in In1−xGaxP Alloys
3. Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase Epitaxy
4. Liquid‐phase‐epitaxial growth of In0.49Ga0.51P on (100) GaAs by a supercooling method
5. Tellurium and zinc doping in In0.5Ga0.5P grown by liquid‐phase epitaxy
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1. Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth;Optical Materials;2022-12
2. Absolute measurement of effective radiative-efficiency in GaAs grown with molecular-beam-epitaxy;Journal of Applied Physics;2017-06-14
3. Ellipsometric Study of Te and Ge Co-Doped In0.5Ga0.5P Alloys;physica status solidi (a);2001-04
4. Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures;Applied Physics Letters;1998-08-31
5. Electron mobility in In0.5Ga0.5P;Journal of Applied Physics;1998-06
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