Electron mobility in In0.5Ga0.5P
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367446
Reference19 articles.
1. Liquid phase epitaxial growth of GaxIn1−xP
2. GaInP grown by molecular beam epitaxy doped with Be and Sn
3. Liquid‐phase‐epitaxial growth of In0.49Ga0.51P on (100) GaAs by a supercooling method
4. Electrical and optical properties of high purity In0.5Ga0.5P grown on GaAs by liquid phase epitaxy
5. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
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1. Sheet Resistance Optimization in (Al)GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells;Solar RRL;2024-04-21
2. 1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency;Progress in Photovoltaics: Research and Applications;2020-02-05
3. Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP;Applied Physics Letters;2014-11-17
4. Temperature-Dependent Electron Transport in In 0.5 Ga 0.5 P/GaAs Grown by MOVPE;Chinese Physics Letters;2007-07-26
5. Alloy scattering in AlGaN and InGaN: A numerical study;Journal of Applied Physics;2007-06-15
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