Tellurium and zinc doping in In0.5Ga0.5P grown by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335518
Reference18 articles.
1. GaxIn1−xP liquid phase epitaxial growth on (100) GaAs substrates
2. Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP
3. Liquid phase epitaxial growth of GaxIn1−xP
4. Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength region
5. MOCVD-Grown Al0.5In0.5P-Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 K
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2. Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples ofp-type Ga0.5In0.5P films;Journal of Physics D: Applied Physics;2016-08-18
3. Radial Nanowire Light-Emitting Diodes in the (AlxGa1–x)yIn1–yP Material System;Nano Letters;2015-12-31
4. 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine;Applied Physics Letters;2003-07-28
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