Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122369
Reference12 articles.
1. Growth and characterization of single‐heterostructure AlGaAs/InGaP red light‐emitting diodes by liquid‐phase epitaxy
2. Photoluminescence of a staggered In0.5Ga0.5P/AlxGa1−xAs heterojunction
3. Determination of Al mole fraction for null conduction band offset in In0.5Ga0.5P/AlxGa1−xAs heterojunction by photoluminescence measurement
4. Band line‐up transition in AlxGa1−xAs/In0.5Ga0.5P from capacitance‐voltage analysis
5. GaxIn1−xP liquid phase epitaxial growth on (100) GaAs substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization of type-II heterostructures for the tuning region in tunable laser diodes;Semiconductor Science and Technology;2003-02-26
2. Erratum: “Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures” [Appl. Phys. Lett. 73, 1245 (1998)];Applied Physics Letters;1998-10-12
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